256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

文件：217.66 Kbytes 頁(yè)數(shù)：10 Pages

MAXIM

美信

256k Nonvolatile SRAM with Battery Monitor

文件：217.66 Kbytes 頁(yè)數(shù)：10 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages

DALLAS

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages

DALLAS

256k非易失SRAM，帶有電池監(jiān)控器

DS1330 256k非易失(NV) SRAM為262,144位、全靜態(tài)非易失SRAM，按照8位、32,768字排列。每個(gè)NV SRAM均自帶鋰電池及控制電路，控制電路連續(xù)監(jiān)視VCC是否超出容差范圍，一旦超出容差范圍，鋰電池便自動(dòng)切換至供電狀態(tài)、寫(xiě)保護(hù)將無(wú)條件使能、防止數(shù)據(jù)被破壞。此外，DS1330器件具有監(jiān)視VCC狀態(tài)和內(nèi)部鋰電池狀態(tài)的專用電路。PowerCap模塊封裝的DS1330器件可以直接表面貼安裝、通常與DS9034PC PowerCap配合構(gòu)成一個(gè)完整的非易失SRAM模塊?？捎脕?lái)替代32k x 8 SRAM、EEPROM或閃存器件。 \n? 在沒(méi)有外部電源的情況下最少可以保存數(shù)據(jù)10年\n? 掉電期間數(shù)據(jù)被自動(dòng)保護(hù)\n? 當(dāng)VCC電壓跌落時(shí)，電源監(jiān)視器能夠復(fù)位處理器、并在VCC上升期間持續(xù)保持處理器的復(fù)位狀態(tài)\n? 電池監(jiān)視器核查剩余電量\n? 100ns的讀寫(xiě)存取時(shí)間 \n? 沒(méi)有寫(xiě)次數(shù)限制\n? 典型待機(jī)電流50μA\n? 可升級(jí)32k x 8 SRAM、EEPROM或閃存\n? 第一次上電前，鋰電池與電路斷開(kāi)、維持保鮮狀態(tài)\n? ±10% VCC工作范圍(DS1330Y)或±5% VCC工作范圍(DS1330AB)\n? 可選的-40°C至+85°C工業(yè)級(jí)溫度范圍，指定為IND\n? PowerCap;

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亞德諾

Package：34-PowerCap? 模塊；包裝：管件 類別：集成電路（IC） 存儲(chǔ)器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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亞德諾

Package：34-PowerCap? 模塊；包裝：管件 類別：集成電路（IC） 存儲(chǔ)器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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亞德諾