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首頁(yè) >DS125>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1258WP-100-IND	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258WP-150	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258WP-150-IND	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258Y	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258Y-100	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258Y-100-IND	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258Y-70	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258Y-70-IND	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1259	文件：73.25 Kbytes Page：5 Pages	Battery Manager Chip DESCRIPTION The DS1259 Battery Manager Chip is a low-cost battery management system for portable and nonvolatile electronic equipment. A battery connected to the battery input pin supplies power to CMOS electronic circuits when primary power is lost through an efficient switch via the VCCO pins. 文件：73.25 Kbytes 頁(yè)數(shù)：5 Pages	DALLAS	DALLAS
DS125BR111	文件：825.01 Kbytes Page：45 Pages	DS125BR111 Low Power 12.5 Gbps 1-Lane Linear Repeater with Equalization 1 Features 1? Low 65 mW/Channel (typ) Power Consumption ? Supports Link Training ? Supports Out-of-Band (OOB) Signaling ? Advanced Signal Conditioning I/O – Receive CTLE up to 10 dB at 6 GHz – Linear Output Driver – Output Voltage Range over 1200 mV ? Programmable via Pin Selection, EEPROM 文件：825.01 Kbytes 頁(yè)數(shù)：45 Pages	TI 德州儀器	TI

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/32
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$59.92 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市福田區(qū)綠盛電子商行	DS1251W-100/120	DAL	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	DS1259S	DALLAS	23+	SOP-16	2800	絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	DS125BR401ANJYR	TI/NS	17+	QFN54	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市卓越微芯電子有限公司	DS125BR800ANJYR	TI/NS	25+	QFN54	14	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1259S	DALLAS	05+	SOP/16	5	全新原裝絕對(duì)有貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	DS1259	DALLAS	15+	DIP16	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	DS1259S	DALLAS	24+	SMD	193	現(xiàn)貨	詢價(jià)
深圳市豪邁興電子有限公司	DS1259S	DALLAS	24+	SOP-16	5645	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市弘為電子有限公司	DS1250AB-70	MAX/DALL	24+	原廠封裝	4612	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市福安甌科技有限公司	DS1251Y-120	DALLAS	25+	N/A	2500	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)

更多DS125供應(yīng)商更新時(shí)間2026-1-22 16:50:00

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