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首頁(yè) >DS125>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1258AB-100	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258AB-100-IND	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258AB-70	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258AB-70-IND	文件：174.34 Kbytes Page：8 Pages	128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi 文件：174.34 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1258W	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258W-100	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258W-100-IND	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258W-150	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258W-150-IND	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1258WP-100	文件：167.31 Kbytes Page：9 Pages	3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W 文件：167.31 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/32
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$59.92 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市福田區(qū)綠盛電子商行	DS1251W-100/120	DAL	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	DS1259S	DALLAS	23+	SOP-16	2800	絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	DS125BR401ANJYR	TI/NS	17+	QFN54	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市卓越微芯電子有限公司	DS125BR800ANJYR	TI/NS	25+	QFN54	14	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1259S	DALLAS	05+	SOP/16	5	全新原裝絕對(duì)有貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	DS1259	DALLAS	15+	DIP16	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	DS1259S	DALLAS	24+	SMD	193	現(xiàn)貨	詢價(jià)
深圳市豪邁興電子有限公司	DS1259S	DALLAS	24+	SOP-16	5645	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市弘為電子有限公司	DS1250AB-70	MAX/DALL	24+	原廠封裝	4612	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市福安甌科技有限公司	DS1251Y-120	DALLAS	25+	N/A	2500	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)

更多DS125供應(yīng)商更新時(shí)間2026-1-22 16:50:00

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