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首頁 >DS125>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS1250BL-70-IND	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1250W	文件：217.37 Kbytes Page：11 Pages	3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns 文件：217.37 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250WP-150	文件：217.37 Kbytes Page：11 Pages	3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns 文件：217.37 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250WP-150-IND	文件：217.37 Kbytes Page：11 Pages	3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns 文件：217.37 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250Y	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250Y-100	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250Y-70	文件：217.62 Kbytes Page：11 Pages	4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such 文件：217.62 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1250YL-100	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1250YL-100-IND	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1250YL-70	文件：181.99 Kbytes Page：9 Pages	4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：181.99 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
512K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/32
Smallest Available Pckg. (max w/pins)(mm2)：
596.9
Budgetary Price (See Notes)：
$59.92 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市寶芯創(chuàng)電子有限公司	DS1250ABP-70IND	DALLAS	18+	34-PCM	35304	全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	DS125BR111RTWR	TI	24+	SMD	85450	TI一級(jí)代理商原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市昊創(chuàng)電子有限公司	DS1250Y-70IND+	DALLAS	1824+	DIP32	2507	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價(jià)
深圳市華睿芯科技有限公司	DS1251YP-100	DALLAS	24+		20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！	詢價(jià)
上海凌岳電子科技有限公司（上海涵恩科技）	DS1250Y-70IND+	DAL	2023+		3000	進(jìn)口原裝現(xiàn)貨	詢價(jià)
深圳市福田區(qū)億興成電子商行	DS125BR800ANJYT	TI	WQFN-54	6688	15	現(xiàn)貨庫存	詢價(jià)
深圳市能元時(shí)代電子有限公司	DS125DF111SQE	TI	23+	QFN	12800	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
上海專毅電子科技有限公司	DS125MB203SQ/NOPB	TI	25+	WQFN54	8800	公司只做原裝,詳情來電咨詢	詢價(jià)
上海磐岳電子有限公司	DS1254YB-100	DS	2023+	BGA	5800	進(jìn)口原裝,現(xiàn)貨熱賣	詢價(jià)
深圳市富利微電子科技有限公司	DS1250Y-70IND+	DALLAS	24+	DIP32	30000	房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談	詢價(jià)

更多DS125供應(yīng)商更新時(shí)間2026-1-20 8:02:00

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