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首頁(yè) >DS1220>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1220AB-200-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AB-200-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AD	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AD-100	文件：201.36 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：201.36 Kbytes 頁(yè)數(shù)：8 Pages	MAXIM 美信	MAXIM
DS1220AD-100-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AD-100-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AD-120-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AD-120-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AD-150-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AD-150-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

產(chǎn)品系列：
DS
封裝外形：
HC-49S
標(biāo)稱頻率：
12.288000MHz
負(fù)載電容：
18pF
頻率穩(wěn)定度_@25℃：
-30~+30ppm
工作溫度范圍：
-20~+70℃
溫頻特性：
-30~+30ppm
尺寸/長(zhǎng)x寬：
11.40 x 4.70mm
高度/厚度：
3.60mm
切型：
AT Cut
振動(dòng)模式：
Fundamental
諧振電阻：
40Ω
靜態(tài)電容：
5.0pF
存儲(chǔ)溫度范圍：
-40~+85℃
輸出波形：
Sine Wave
激勵(lì)功率：
100μW
引腳數(shù)：
2Pins
絕緣電阻_ @ DC100V：
500 MΩ
年老化率_ppm/10Years：
-5.0~+5.0ppm/year
封裝技術(shù)：
Resistance Weld
包裝類型：
Bag Packing
載帶標(biāo)準(zhǔn)：
N/Amm
載盤尺寸：
N/A
最小包裝數(shù)：
200Pcs
安裝方式：
Through Hole
主要材質(zhì)：
Quartz Crystal
品牌國(guó)別：
China
原始制造商：
Failong Crystal Technology Co.
印字類型：
Laser
凈重：
0.4g
美國(guó)海關(guān)關(guān)稅編碼：
8541600030
歐洲進(jìn)口關(guān)稅編碼：
8541600000
別名：
--

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	DS1220		24+		5000		詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1220	DS	05+	原廠原裝	4285	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市賽爾通科技有限公司	DS1220	DS	23+		65480		詢價(jià)
深圳市億智騰科技有限公司	DS1220		24+	DIP	6430	原裝現(xiàn)貨/歡迎來(lái)電咨詢	詢價(jià)
深圳市恒達(dá)億科技有限公司	DS1220	DS	25+	DIP	3200	全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售	詢價(jià)
深圳市安富世紀(jì)電子有限公司	DS1220	DALLAS	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市昌和盛利電子有限公司	DS1220	DS	26+	模塊	3562	代理全系列銷售,全新原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng),量大可訂	詢價(jià)
深圳市樂(lè)峰達(dá)科技有限公司	DS1220	TT/OPTEK	25+	NA	10000	全新原裝正品、可開增票、可溯源、一站式配單	詢價(jià)
深圳市粵科源興科技有限公司	DS1220AD-200IND+	MAXIM	13+	MOD	3758	原裝分銷	詢價(jià)
深圳市益百分電子有限公司	DS1220Y-200	DALLAS	DIP	95+	2	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)

更多DS1220供應(yīng)商更新時(shí)間2026-1-21 16:30:00

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