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首頁(yè) >DS1220>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1220	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220	文件：509.1 Kbytes Page：5 Pages	Platon Metal Tube VA Gas or Liquid 文件：509.1 Kbytes 頁(yè)數(shù)：5 Pages	TTELEC	TTELEC
DS1220	文件：300 bytes Page：1 Pages	16k Nonvolatile SRAM DESCRIPTION\nThe DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs\norganized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and\ncontrol circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a 10 years minimum data retention in the absence of external power\nData is automatically protected during power loss\nDirectly replaces 2k x 8 volatile static RAM or EEPROM\nUnlimited write cycles\nLow-power CMOS\nJEDEC standard 24-pin DIP package\nRead and write access times as fast as 100 ns\nLithi;	ADI 亞德諾	ADI
DS1220AB	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AB-100-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AB-100-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AB-120-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AB-120-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1220AB-150-IND	文件：144.55 Kbytes Page：8 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCCfor an out-of-tolerance condition. FEATURES 10 ye 文件：144.55 Kbytes 頁(yè)數(shù)：8 Pages	DALLAS	DALLAS
DS1220AB-150-IND	文件：136.85 Kbytes Page：9 Pages	16k Nonvolatile SRAM DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：136.85 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

產(chǎn)品系列：
DS
封裝外形：
HC-49S
標(biāo)稱頻率：
12.288000MHz
負(fù)載電容：
18pF
頻率穩(wěn)定度_@25℃：
-30~+30ppm
工作溫度范圍：
-20~+70℃
溫頻特性：
-30~+30ppm
尺寸/長(zhǎng)x寬：
11.40 x 4.70mm
高度/厚度：
3.60mm
切型：
AT Cut
振動(dòng)模式：
Fundamental
諧振電阻：
40Ω
靜態(tài)電容：
5.0pF
存儲(chǔ)溫度范圍：
-40~+85℃
輸出波形：
Sine Wave
激勵(lì)功率：
100μW
引腳數(shù)：
2Pins
絕緣電阻_ @ DC100V：
500 MΩ
年老化率_ppm/10Years：
-5.0~+5.0ppm/year
封裝技術(shù)：
Resistance Weld
包裝類型：
Bag Packing
載帶標(biāo)準(zhǔn)：
N/Amm
載盤(pán)尺寸：
N/A
最小包裝數(shù)：
200Pcs
安裝方式：
Through Hole
主要材質(zhì)：
Quartz Crystal
品牌國(guó)別：
China
原始制造商：
Failong Crystal Technology Co.
印字類型：
Laser
凈重：
0.4g
美國(guó)海關(guān)關(guān)稅編碼：
8541600030
歐洲進(jìn)口關(guān)稅編碼：
8541600000
別名：
--

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	DS1220		24+		5000		詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1220	DS	05+	原廠原裝	4285	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市賽爾通科技有限公司	DS1220	DS	23+		65480		詢價(jià)
深圳市億智騰科技有限公司	DS1220		24+	DIP	6430	原裝現(xiàn)貨/歡迎來(lái)電咨詢	詢價(jià)
深圳市恒達(dá)億科技有限公司	DS1220	DS	25+	DIP	3200	全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售	詢價(jià)
深圳市安富世紀(jì)電子有限公司	DS1220	DALLAS	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市昌和盛利電子有限公司	DS1220	DS	26+	模塊	3562	代理全系列銷(xiāo)售,全新原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng),量大可訂	詢價(jià)
深圳市樂(lè)峰達(dá)科技有限公司	DS1220	TT/OPTEK	25+	NA	10000	全新原裝正品、可開(kāi)增票、可溯源、一站式配單	詢價(jià)
深圳市粵科源興科技有限公司	DS1220AD-200IND+	MAXIM	13+	MOD	3758	原裝分銷(xiāo)	詢價(jià)
深圳市益百分電子有限公司	DS1220Y-200	DALLAS	DIP	95+	2	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)

更多DS1220供應(yīng)商更新時(shí)間2026-1-21 16:30:00

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