SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：123.83 Kbytes 頁數(shù)：2 Pages

TRSYS

Transys Electronics

120...195 Watt DC-DC Converters

120...195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage ? Extremely slim case (4 TE), fully enclosed ? Extremely low inrush current, hot swappable ? Operating ambient temperature range –40..

文件：72.35 Kbytes 頁數(shù)：5 Pages

POWER-ONE

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 400A

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 400A Price** : 3,460.00 USD

文件：70.81 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德

PELTIER MODULE

FEATURES ? arcTEC? structure on select models ? enhanced reliability for high thermal cycling ? superior thermal performance ? silicon sealed ? wide ΔT max ? low profile ? precise temperature control ? solid state construction

文件：1.3204 Mbytes 頁數(shù)：9 Pages

CUID

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 400A

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 400A Price** : 4,440.00 USD

文件：70.9 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德

NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 18,000?

文件：482.53 Kbytes 頁數(shù)：2 Pages

CENTRAL

Small Signal Transistor NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 18,000?

文件：211.1 Kbytes 頁數(shù)：2 Pages

CENTRAL

NPN - High Current Transistor Die

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 18,000?

文件：575.04 Kbytes 頁數(shù)：3 Pages

CENTRAL

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：62.42 Kbytes 頁數(shù)：2 Pages

PANJIT

強(qiáng)茂

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：123.83 Kbytes 頁數(shù)：2 Pages

TRSYS

Transys Electronics