8K HDMI FEMALE - FEMALE FEEDTHROUGH CONNECTOR

Feedthrough Features ??Fits standard XLR ?24mm cutout. ??No soldering or punch termination. Use standard cable for each connector style. ??Front or rear mounted. ??Low rear profile

文件：462.17 Kbytes 頁數(shù)：1 Pages

CLIFF

PELTIER MODULE

FEATURES ? arcTEC? structure on select models ? enhanced reliability for high thermal cycling ? superior thermal performance ? silicon sealed ? wide ΔT max ? low profile ? precise temperature control ? solid state construction

文件：1.3204 Mbytes 頁數(shù)：9 Pages

CUID

PELTIER MODU LE

DESCRIPTION: 3.0 A PELTIER MODULE FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：143.94 Kbytes 頁數(shù)：3 Pages

CUI

3.0 A PELTIER MODULE

DESCRIPTION: 3.0 A PELTIER MODULE FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：290.67 Kbytes 頁數(shù)：5 Pages

CUI

PELTIER MODULE

FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：340.75 Kbytes 頁數(shù)：6 Pages

CUID

PELTIER MODULE

FEATURES ? arcTEC? structure on select models ? enhanced reliability for high thermal cycling ? superior thermal performance ? silicon sealed ? wide ΔT max ? low profile ? precise temperature control ? solid state construction

文件：1.3204 Mbytes 頁數(shù)：9 Pages

CUID

PELTIER MODULE

DESCRIPTION: PELTIER MODULE FEATURES ? solid state device ? high performance cooler ? precise temperature control ? quiet operation

文件：625.52 Kbytes 頁數(shù)：6 Pages

CUI

NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 4.2 x 4.2 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au-As - 13,000?

文件：735.62 Kbytes 頁數(shù)：2 Pages

CENTRAL

Small Signal Transistor NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 18,000?

文件：476.93 Kbytes 頁數(shù)：2 Pages

CENTRAL

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：62.42 Kbytes 頁數(shù)：2 Pages

PANJIT

強茂