Terminal Block 2.5?

Features: ?Suitable for broad range of cross-section and types of wires ?Wires can be connected without any special preparation ?Easy for the extension of terminal connection ?Easy of handling and safe connection ?An excellent vibration proof protection against loosening ?High reliability an

文件：129.85 Kbytes 頁數(shù)：1 Pages

MULTICOMP

易絡盟

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：498.1 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：497.34 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ???????■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：87.64 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：875.51 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：627.14 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：45.27 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant.

文件：390.98 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：733.35 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞