N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：497.34 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：379.91 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：379.29 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：695.69 Kbytes 頁數(shù)：4 Pages

CET

華瑞

PNP SILICON PLANAR POWER TRANSISTOR

PNP SILICON PLANAR POWER TRANSISTOR TO-220FP Fully Isolated Plastic Package Complementary CFC2562 High Current Switching Applications

文件：139.2 Kbytes 頁數(shù)：3 Pages

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