| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. Lead free product is acquired. 文件：807.98 Kbytes 頁(yè)數(shù)：7 Pages | CET-MOS 華瑞 | CET-MOS | ||
Dual Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plati 文件：620.61 Kbytes 頁(yè)數(shù)：7 Pages | CET 華瑞 | CET | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 5V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. RDS(ON) = 180mW @VGS = 10V. Lead-free plating ; RoHS compliant. 文件：808.43 Kbytes 頁(yè)數(shù)：7 Pages | CET-MOS 華瑞 | CET-MOS | ||
Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) 30V, 6.2A, RDS(ON) = 33mW @VGS = 10V. FEATURES RDS(ON) = 60mW @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 文件：1.07577 Mbytes 頁(yè)數(shù)：7 Pages | CET-MOS 華瑞 | CET-MOS | ||
Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. ■ -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili 文件：587.21 Kbytes 頁(yè)數(shù)：7 Pages | CET 華瑞 | CET | ||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V , 6A , RDS(ON)=20m? @VGS=4.5V. RDS(ON)=30m? @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package. 文件：61.54 Kbytes 頁(yè)數(shù)：5 Pages | CET 華瑞 | CET | ||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package. 文件：56.45 Kbytes 頁(yè)數(shù)：5 Pages | CET 華瑞 | CET | ||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired. ■ ESD Protected: 2000 V 文件：396.85 Kbytes 頁(yè)數(shù)：4 Pages | CET 華瑞 | CET | ||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. ESD Protected: 2000 V 文件：609.52 Kbytes 頁(yè)數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.9A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 33mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. 文件：419.91 Kbytes 頁(yè)數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS |
技術(shù)參數(shù)
- Ppp(W)：
200
- VRWM(V)：
150
- VBRMin(V)：
167
- VBRMax(V)：
185
- IR(uA)：
1
- it(mA)：
1
- VC(V)：
243
- IPP(A)：
0.8
- Package：
SOD-123FL
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SUNMATE(森美特) |
2019+ROHS |
SOD-123 |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價(jià) | ||
VISHAYMAS |
25+23+ |
SOD-123FL |
25145 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ision |
20+ |
SOD-123FL |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
21+ |
SOD-123FL |
3000 |
晶導(dǎo)優(yōu)勢(shì)分銷 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SOD-123FL |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MCC |
24+ |
SOD-123FL |
99550 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
CHINA |
1822+ |
SOD-123 |
39000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ision |
SOD-123FL |
99080 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
24+ |
N/A |
57000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
捷捷微 |
23+ |
SOD-123FL |
50000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) |
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