Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 6A , RDS(ON)=20m? @VGS=4.5V. RDS(ON)=30m? @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

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CET

華瑞

雙N溝道增強(qiáng)型場效應(yīng)晶體管

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PDF上傳者：深圳市金億隆電子科技有限公司

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

華瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 6 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

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CHENMKO

力勤

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. ? Universal plastic enclosure with screw fastening ? Available in 26 sizes in two colours; white and black ? Suitable for measuring instruments, testing, devices, wireless communications devices, med

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CAMDENBOSS

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. ? Universal plastic enclosure with screw fastening ? Available in 26 sizes in two colours; white and black ? Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 頁數(shù)：2 Pages

CAMDENBOSS