Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. ■ -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

文件：587.21 Kbytes 頁數(shù)：7 Pages

CET

華瑞

Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel)

30V, 6.2A, RDS(ON) = 33mW @VGS = 10V. FEATURES RDS(ON) = 60mW @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.07577 Mbytes 頁數(shù)：7 Pages

CET-MOS

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N+P Power MOSFET

CET

華瑞

Three-terminal positive voltage regulator

文件：127.22 Kbytes 頁數(shù)：2 Pages

JIANGSU

長電科技

Three-terminal positive voltage regulator

文件：191.67 Kbytes 頁數(shù)：2 Pages

JIANGSU

長電科技

Three-terminal positive voltage regulator

文件：2.71615 Mbytes 頁數(shù)：3 Pages

JIANGSU

長電科技