絲?。?strong>CEF；Package：SC70；Single 2-Input Positive-AND Gate

文件：2.93451 Mbytes 頁數(shù)：48 Pages

TI

德州儀器

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：429.92 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：374.19 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ???????■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：45.44 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：539.32 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：350.41 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：599.68 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：592.86 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：125.19 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：599.54 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞