絲?。?strong>CEK；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 頁數(shù)：4 Pages

CHENDA

辰達(dá)半導(dǎo)體

絲印：CEK；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 頁數(shù)：4 Pages

JUXING

廣東鉅興電子

絲?。?strong>CEK；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲?。?strong>CEK；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 頁數(shù)：4 Pages

YFWDIODE

佑風(fēng)微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.35A, RDS(ON) = 10.5 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.

文件：679.14 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

文件：1.2255 Mbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

文件：375.48 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.3A, RDS(ON) = 15 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.

文件：583.86 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1A, RDS(ON) = 9.3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired.

文件：613.93 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package.

文件：404.1 Kbytes 頁數(shù)：4 Pages

CET

華瑞