N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：462.09 Kbytes 頁數(shù)：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：723.02 Kbytes 頁數(shù)：4 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ???????■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：45.44 Kbytes 頁數(shù)：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes 頁數(shù)：4 Pages

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華瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：125.19 Kbytes 頁數(shù)：4 Pages

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