| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：399.88 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ■ Lead free product is acquired. 文件：502.71 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. 文件：640.41 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. 文件：795.11 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：418.61 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON) High power and current handing capability Lead free product is acquired. 文件：400.95 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-263 & TO-220 package. 文件：398.87 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired. 文件：646.02 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：330.39 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：695.04 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
視頻輸出 （Vid）
- 封裝形式：
直插封裝
- 極限工作電壓：
160V
- 最大電流允許值：
0.1A
- 最大工作頻率：
95MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-23
- vtest：
160
- htest：
95000000
- atest：
0.1
- wtest：
0.625
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HGF |
23+ |
TO-92 |
7600 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HGF |
25+ |
TO-92 |
50000 |
原裝正品,假一罰十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
SOT143 |
8200 |
公司現(xiàn)貨庫存,支持實單 |
詢價 | ||
23+ |
2482 |
詢價 | |||||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
BRIGHT |
24+ |
TSOP |
6200 |
詢價 | |||
BRIGHT |
06+ |
TSOP |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
BRIGHT |
24+ |
N/A |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
BRIGHT |
2025+ |
TSOP |
3715 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ROHM/羅姆 |
22+ |
SOT23-5 |
8000 |
原裝正品支持實單 |
詢價 |
