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          首頁 >CEB>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEB655N

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

          文件:106.3 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB658N

          N-Channel Enhancement Mode Field Effect Transistor

          N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

          文件:491.91 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB65A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 25V, 45A,RDS(ON) = 12m? @VGS = 10V. RDS(ON) = 18m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:101.64 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB65N15

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 150V, 62A, RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. Synchronous rectification for AC-DC SMPS. Applications Motor control for 48V-80V systems . Isolated

          文件:511.73 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          CEB6601

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:434.89 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB68N10L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 69A, RDS(ON) = 9.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 13mW @V GS = 4.5V.

          文件:935.98 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          CEB7030

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          30V, 65A, RDS(ON) = 8m? @VGS=10V. RDS(ON) = 12m? @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

          文件:515.73 Kbytes 頁數(shù):5 Pages

          CET

          華瑞

          CEB7030L

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          30V, 65A, RDS(ON) = 8m? @VGS=10V. RDS(ON) = 12m? @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

          文件:515.73 Kbytes 頁數(shù):5 Pages

          CET

          華瑞

          CEB703AL

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ???????● TO-220 & TO-263 package.

          文件:516.96 Kbytes 頁數(shù):5 Pages

          CET

          華瑞

          CEB703ALS2

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ???????● TO-220 & TO-263 package.

          文件:528.71 Kbytes 頁數(shù):5 Pages

          CET

          華瑞

          晶體管資料

          • 型號:

            BF297

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            視頻輸出 (Vid)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            160V

          • 最大電流允許值:

            0.1A

          • 最大工作頻率:

            95MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,

          • 最大耗散功率:

            0.625W

          • 放大倍數(shù):

          • 圖片代號:

            A-23

          • vtest:

            160

          • htest:

            95000000

          • atest:

            0.1

          • wtest:

            0.625

          供應(yīng)商型號品牌批號封裝庫存備注價格
          HGF
          23+
          TO-92
          7600
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價
          HGF
          25+
          TO-92
          50000
          原裝正品,假一罰十!
          詢價
          Infineon/英飛凌
          24+
          SOT143
          8200
          公司現(xiàn)貨庫存,支持實單
          詢價
          23+
          2482
          詢價
          JXK/杰信科
          23+
          TO-92
          1999998
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
          詢價
          BRIGHT
          24+
          TSOP
          6200
          詢價
          BRIGHT
          06+
          TSOP
          1000
          全新原裝 絕對有貨
          詢價
          BRIGHT
          24+
          N/A
          13523
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
          詢價
          BRIGHT
          2025+
          TSOP
          3715
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價
          ROHM/羅姆
          22+
          SOT23-5
          8000
          原裝正品支持實單
          詢價
          更多CEB供應(yīng)商 更新時間2026-1-20 11:01:00
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