| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 55V, 75A, RDS(ON) = 13m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：505.64 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 55V, 75A, RDS(ON) = 13m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：508.82 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 75A, RDS(ON) = 14m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：507.32 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 75A, RDS(ON) = 14m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：511.7 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 75A, RDS(ON) = 13m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：530.48 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 75A, RDS(ON) = 13m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. 文件：527 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V 文件：533.29 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：940.17 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating . 文件：658.46 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free prod 文件：419.95 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
視頻輸出 （Vid）
- 封裝形式：
直插封裝
- 極限工作電壓：
160V
- 最大電流允許值：
0.1A
- 最大工作頻率：
95MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-23
- vtest：
160
- htest：
95000000
- atest：
0.1
- wtest：
0.625
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HGF |
23+ |
TO-92 |
7600 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HGF |
25+ |
TO-92 |
50000 |
原裝正品,假一罰十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
SOT143 |
8200 |
公司現(xiàn)貨庫存,支持實單 |
詢價 | ||
23+ |
2482 |
詢價 | |||||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
BRIGHT |
24+ |
TSOP |
6200 |
詢價 | |||
BRIGHT |
06+ |
TSOP |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
BRIGHT |
24+ |
N/A |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
BRIGHT |
2025+ |
TSOP |
3715 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ROHM/羅姆 |
22+ |
SOT23-5 |
8000 |
原裝正品支持實單 |
詢價 |
