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          首頁 >CEB>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEB50N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

          文件:430.82 Kbytes 頁數(shù):4 Pages

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          CEB50P03

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

          文件:900.88 Kbytes 頁數(shù):4 Pages

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          CEB50P03

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -30V, -47A, RDS(ON) =20m? @VGS = -10V. RDS(ON) =32m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:104.25 Kbytes 頁數(shù):4 Pages

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          CEB5175

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.

          文件:503.67 Kbytes 頁數(shù):4 Pages

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          CEB5175

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

          文件:683.38 Kbytes 頁數(shù):4 Pages

          CET

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          CEB51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 48A, RDS(ON) =16.5m? @VGS = 10V. RDS(ON) =28m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:103.92 Kbytes 頁數(shù):4 Pages

          CET

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          CEB540A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 36A, RDS(ON) = 48m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:101.68 Kbytes 頁數(shù):4 Pages

          CET

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          CEB540L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 36A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.

          文件:633.43 Kbytes 頁數(shù):4 Pages

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          CEB540N

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

          文件:585.01 Kbytes 頁數(shù):4 Pages

          CET-MOS

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          CEB540N

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:412.7 Kbytes 頁數(shù):4 Pages

          CET

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          晶體管資料

          • 型號:

            BF297

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            視頻輸出 (Vid)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            160V

          • 最大電流允許值:

            0.1A

          • 最大工作頻率:

            95MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,

          • 最大耗散功率:

            0.625W

          • 放大倍數(shù):

          • 圖片代號:

            A-23

          • vtest:

            160

          • htest:

            95000000

          • atest:

            0.1

          • wtest:

            0.625

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          HGF
          23+
          TO-92
          7600
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          HGF
          25+
          TO-92
          50000
          原裝正品,假一罰十!
          詢價(jià)
          Infineon/英飛凌
          24+
          SOT143
          8200
          公司現(xiàn)貨庫存,支持實(shí)單
          詢價(jià)
          23+
          2482
          詢價(jià)
          JXK/杰信科
          23+
          TO-92
          1999998
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
          詢價(jià)
          BRIGHT
          24+
          TSOP
          6200
          詢價(jià)
          BRIGHT
          06+
          TSOP
          1000
          全新原裝 絕對有貨
          詢價(jià)
          BRIGHT
          24+
          N/A
          13523
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          BRIGHT
          2025+
          TSOP
          3715
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價(jià)
          ROHM/羅姆
          22+
          SOT23-5
          8000
          原裝正品支持實(shí)單
          詢價(jià)
          更多CEB供應(yīng)商 更新時(shí)間2026-1-20 15:01:00
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