| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 215A, RDS(ON) = 2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.3 mW @VGS = 9V. RoHS compliant. 文件：447.17 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant. 文件：448.77 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：647.15 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：426.66 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 256A, TO-263 RDS(ON) typ = 1.8mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. TO-220 RDS(ON) typ = 2.0mW @VGS = 10V Battery protection,UPS. Applications 文件：423.74 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
PIEZOELECTRIC DIAPHRAGM FEATURES ? piezo element with wire leads ? 30 Vp-p max operating voltage ? 4,600 Hz rated frequency 文件：237.48 Kbytes 頁數(shù)：3 Pages | CUID | CUID | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -90A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.1mW @VGS = -4.5V. 文件：443.6 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package 文件：413.92 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A ,RDS(ON) = 6.0mW @VGS = 10V. RDS(ON) = 7.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：594.18 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：784.4 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
視頻輸出 （Vid）
- 封裝形式：
直插封裝
- 極限工作電壓：
160V
- 最大電流允許值：
0.1A
- 最大工作頻率：
95MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-23
- vtest：
160
- htest：
95000000
- atest：
0.1
- wtest：
0.625
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HGF |
23+ |
TO-92 |
7600 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
HGF |
25+ |
TO-92 |
50000 |
原裝正品,假一罰十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
SOT143 |
8200 |
公司現(xiàn)貨庫存,支持實單 |
詢價 | ||
23+ |
2482 |
詢價 | |||||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
BRIGHT |
24+ |
TSOP |
6200 |
詢價 | |||
BRIGHT |
06+ |
TSOP |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
BRIGHT |
24+ |
N/A |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
BRIGHT |
2025+ |
TSOP |
3715 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ROHM/羅姆 |
22+ |
SOT23-5 |
8000 |
原裝正品支持實單 |
詢價 |
