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          首頁 >CEB>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEB1310S

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 85A, RDS(ON) = 8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

          文件:930.29 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          CEB1310SL

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 88A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

          文件:499.33 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          CEB13N07

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 70V, 13A, RDS(ON) = 125m? @VGS = 10V. RDS(ON) = 150m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:100.89 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB13N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:98.58 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB13N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 12.8A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

          文件:586.14 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEB13N10L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 12.8A, RDS(ON) = 175mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 185mW @VGS = 5V.

          文件:589.93 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEB13N10L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:663.1 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEB13N5A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

          文件:495.22 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEB13N5B

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:534.16 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          CEB13N65S

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:717.4 Kbytes 頁數(shù):5 Pages

          CET-MOS

          華瑞

          晶體管資料

          • 型號:

            BF297

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            視頻輸出 (Vid)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            160V

          • 最大電流允許值:

            0.1A

          • 最大工作頻率:

            95MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,

          • 最大耗散功率:

            0.625W

          • 放大倍數(shù):

          • 圖片代號:

            A-23

          • vtest:

            160

          • htest:

            95000000

          • atest:

            0.1

          • wtest:

            0.625

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          HGF
          23+
          TO-92
          7600
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          HGF
          25+
          TO-92
          50000
          原裝正品,假一罰十!
          詢價(jià)
          Infineon/英飛凌
          24+
          SOT143
          8200
          公司現(xiàn)貨庫存,支持實(shí)單
          詢價(jià)
          23+
          2482
          詢價(jià)
          JXK/杰信科
          23+
          TO-92
          1999998
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
          詢價(jià)
          BRIGHT
          24+
          TSOP
          6200
          詢價(jià)
          BRIGHT
          06+
          TSOP
          1000
          全新原裝 絕對有貨
          詢價(jià)
          BRIGHT
          24+
          N/A
          13523
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          BRIGHT
          2025+
          TSOP
          3715
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價(jià)
          ROHM/羅姆
          22+
          SOT23-5
          8000
          原裝正品支持實(shí)單
          詢價(jià)
          更多CEB供應(yīng)商 更新時(shí)間2026-1-19 15:04:00
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