絲?。?a target="_blank" title="Marking" href="/k23/marking.html">K23；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applicat

文件：532.99 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/123bk/marking.html">123BK；Package：SOT-23；MOSFET

Features ? ESD protected gate ? High speed switching ? Pb-free lead plating and halogen-free package ? Easily designed drive circuits ? Low-voltage drive ? Easy to use in parallel

文件：889.16 Kbytes 頁數(shù)：7 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/123/marking.html">123；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：2.06458 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/k23/marking.html">K23；Package：SOT-323；N-Channel MOSFET

FEATURE ? Surface Mount Package ? High Density Cell Design for Extremely Low RDS(ON) ? Voltage Controlled Small Signal Switch ? Rugged and Reliable APPLICATION ? Small Servo Motor Controls ? Power MOSFET Gate Drivers ? Switching Application

文件：455.1 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

文件：397.93 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-c

文件：216.64 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Inp

文件：67.49 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? High Drain-Source Voltage Rating ? Lead Free/RoHS Compliant (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability ? Green Device, Note 3 and 4

文件：152.36 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? High Drain-Source Voltage Rating ? Lead Free/RoHS Compliant (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability ? Green Device, Note 3 and 4

文件：152.36 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? High Drain-Source Voltage Rating ? Lead Free/RoHS Compliant (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability ? Green Device, Note 3 and 4

文件：152.36 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體