N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

文件：45.09 Kbytes 頁(yè)數(shù)：1 Pages

ZETEX

絲?。?a target="_blank" title="Marking" href="/sa-/marking.html">SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：284.54 Kbytes 頁(yè)數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：145.18 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sa-/marking.html">SA-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES ? ’Trench’ technology ? Extremely fast switching ? Logic level compatible ? Subminiatur

文件：56.92 Kbytes 頁(yè)數(shù)：4 Pages

PHI

PHI

SIPMOS Small-Signal-Transistor

SIPMOS? Small-Signal-Transistor Feature ? N-Channel ? Enhancement mode ? Logic Level ? dv/dt rated ? Pb-free lead plating; RoHS compliant ? Qualified according to AEC Q101

文件：77.44 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 頁(yè)數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

Features ? High Dense Cell Design for Extremely Low RDS(ON) ? Voltage Controlled Small Signal Switch ? Surface Mount Package ? Epoxy Meets UL 94 V-0 Flammability Rating ? Moisture Sensitivity Level 1 ? Halogen Free Available Upon Request By Adding Suffix -HF ? Lead Free Finish/RoHS Complian

文件：627.8 Kbytes 頁(yè)數(shù)：4 Pages

MCC

Power MOSFET N-Channel

Features: * Low On-Resistance : 6.0Ω * Low Input Capacitance: 20PF * Low Out put Capacitance : 9PF * Low Threshole :2.8V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

文件：98.79 Kbytes 頁(yè)數(shù)：3 Pages

WEITRON

N Channel MOSFET

N Channel MOSFET FEATURE ● Surface Mount Package ● High Density Cell Design for Extremely Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable APPLICATION ● Small Servo Motor Controls ● Power MOSFET Gate Drivers ● Switching Application

文件：1.00704 Mbytes 頁(yè)數(shù)：5 Pages

JIANGSU

長(zhǎng)電科技

絲?。?a target="_blank" title="Marking" href="/sa/marking.html">SA；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

FEATURE ● Pb-Free Package is available.

文件：450.15 Kbytes 頁(yè)數(shù)：4 Pages

LEIDITECH

雷卯電子