N-CHANNEL ENHANCEMENT MODE MOSFET

Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low curr

文件：351.97 Kbytes 頁數(shù)：5 Pages

BWTECH

絲印：B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

文件：493.66 Kbytes 頁數(shù)：3 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sa.x/marking.html">SA.x；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.51624 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/b123./marking.html">B123.；Package：SOT-23；N-Channel Enhancement Mode MOSFET

文件：1.07264 Mbytes 頁數(shù)：9 Pages

FUTUREWAFER

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：202.46 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：SA-；Package：SOT-23；N-channel TrenchMOS transistor

文件：29.38 Kbytes 頁數(shù)：4 Pages

PHI

PHI

SIPMOS Small-Signal-Transistor

文件：128.509 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

SIPMOS??Small-Signal-Transistor Feature

文件：3.46577 Mbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：367.31 Kbytes 頁數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：128.61 Kbytes 頁數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體