| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN 9 GHz wideband transistor DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MA 文件:101.87 Kbytes 頁數(shù):16 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件:9.37507 Mbytes 頁數(shù):130 Pages | 恩XP | 恩XP | ||
isc Silicon NPN RF Transistor DESCRIPTION ? High Power Gain ? High Current Gain Bandwidth Product ? Low Noise Figure APPLICATIONS ? Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.). 文件:207.3 Kbytes 頁數(shù):7 Pages | ISC 無錫固電 | ISC | ||
NPN Silicon Germanium RF Transistor Product Brief The BFR720L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR720L3RH provides a transition frequency fT of 43 GHz and is suited for low voltage applic 文件:495.53 Kbytes 頁數(shù):5 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon Germanium RF Transistor NPN Silicon Germanium RF Transistor ? High gain ultra low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise 文件:137.09 Kbytes 頁數(shù):9 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon Germanium RF Transistor Product Brief The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low 文件:602.83 Kbytes 頁數(shù):11 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon Germanium RF Transistor Linear Low Noise SiGe:C Bipolar RF Transistor ? High gain ultra low noise RF transistor ? Based on Infineons reliable high volume Silicon Germanium technology ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz ? Ideal for WLAN and all 5-6 GHz appl 文件:79.09 Kbytes 頁數(shù):8 Pages | INFINEON 英飛凌 | INFINEON | ||
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Product Brief The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 ? at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. T 文件:1.52064 Mbytes 頁數(shù):27 Pages | INFINEON 英飛凌 | INFINEON | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features ? High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA ? Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz ? High Pow 文件:171.32 Kbytes 頁數(shù):5 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features ? High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA ? Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz ? High Pow 文件:120.73 Kbytes 頁數(shù):5 Pages | ADPOW | ADPOW |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
表面帖裝型 (SMD)
- 封裝形式:
貼片封裝
- 極限工作電壓:
30V
- 最大電流允許值:
5A
- 最大工作頻率:
120MHZ
- 引腳數(shù):
3
- 可代換的型號:
2SB1308,
- 最大耗散功率:
0.75W
- 放大倍數(shù):
- 圖片代號:
H-100
- vtest:
30
- htest:
120000000
- atest:
5
- wtest:
0.75
技術(shù)參數(shù)
- 電壓 - 集射極擊穿(最大值):
12V
- 頻率 - 躍遷:
8GHz
- 噪聲系數(shù)(dB,不同 f 時的典型值):
1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
- 增益:
19.5dB
- 功率 - 最大值:
175mW
- 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):
50 @ 5mA,8V
- 電流 - 集電極(Ic)(最大值):
20mA
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝
- 封裝/外殼:
SC-75,SOT-416
- 供應商器件封裝:
PG-SC-75
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LINFINEON |
23+ |
SOT393 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
LINFINEON |
23+ |
SOT393 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
2223+ |
PG-SOD323-2 |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
INFINEON |
21+ |
標準封裝 |
100 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號 |
詢價 | ||
恩XP |
1725+ |
SOT23 |
7500 |
只做原裝進口,假一罰十 |
詢價 | ||
INFINEON |
23+ |
SOT323 |
64550 |
正規(guī)渠道,只有原裝! |
詢價 | ||
VISHAY |
23+ |
SOT143 |
1050 |
專營高頻管模塊,全新原裝! |
詢價 | ||
INFINNM |
12+ |
TSFP-3 |
9770 |
原裝/現(xiàn)貨 |
詢價 | ||
恩XP |
2016+ |
SOT-23 |
1980 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
3366 |
原裝現(xiàn)貨 |
詢價 |
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