| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN Silicon RF Transistor NPN Silicon RF Transistor Preliminary data ? Low voltage/ low current operation ? For low noise amplifiers ? For Oscillators up to 3.5 GHz and Pout > 10 dBm ? Low noise figure: 1.0 dB at 1.8 GHz 文件:100.39 Kbytes 頁數(shù):4 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor Linear Low Noise Silicon Bipolar RF Transistor ? High linearity low noise driver amplifier ? Output compression point 19.5 dBm @ 1.8 GHz ? Ideal for oscillators up to 3.5 GHz ? Low noise figure 1.1 dB at 1.8 GHz ? Collector design supports 5 V supply voltage ? Pb-free (RoHS compliant) and ha 文件:141.25 Kbytes 頁數(shù):8 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor Linear Low Noise Silicon Bipolar RF Transistor ? High linearity low noise driver amplifier ? Output compression point 19.5 dBm @ 1.8 GHz ? Ideal for oscillators up to 3.5 GHz ? Low noise figure 1.1 dB at 1.8 GHz ? Collector design supports 5 V supply voltage ? Pb-free (RoHS compliant) and ha 文件:141.25 Kbytes 頁數(shù):8 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor Linear Low Noise Silicon Bipolar RF Transistor ? High current capability and low noise figure for wide dynamic range ? Collector design supports supply voltage up to 5V ? Ideal for low phase noise oscillators up to 3.5 GHz ? Low noise figure 1.1 dB at 1.8 GHz ? Pb-free (RoHS compliant) an 文件:102.07 Kbytes 頁數(shù):4 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor Preliminary data ? High current capability and low figure for wide dynamic range application ? Low voltage operation ? Ideal for low phase noise oscillators up to 3.5 GHz ? Low noise figure: 1.1 dB at 1.8 GHz 文件:101.16 Kbytes 頁數(shù):4 Pages | INFINEON 英飛凌 | INFINEON | ||
16.5 GHz fT Wideband NPN Chip Description NPN transistor in unencapsulated chip form. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very 文件:2.90174 Mbytes 頁數(shù):4 Pages | SS | SS | ||
NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor ? For low voltage / low current applications ? Ideal for VCO modules and low noise amplifiers ? Low noise figure: 1.1 dB at 1.8 GHz ? Excellent ESD performance typical value 1500V (HBM) ? High fT of 22 GHz ? Pb-free (RoHS compliant) and halogen-fre 文件:96.33 Kbytes 頁數(shù):5 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN 9 GHz wideband transistor DESCRIPTION The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners 文件:120.89 Kbytes 頁數(shù):12 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件:9.37507 Mbytes 頁數(shù):130 Pages | 恩XP | 恩XP | ||
絲印:N0;Package:SOT-416;RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件:9.37507 Mbytes 頁數(shù):130 Pages | 恩XP | 恩XP |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
表面帖裝型 (SMD)
- 封裝形式:
貼片封裝
- 極限工作電壓:
30V
- 最大電流允許值:
5A
- 最大工作頻率:
120MHZ
- 引腳數(shù):
3
- 可代換的型號:
2SB1308,
- 最大耗散功率:
0.75W
- 放大倍數(shù):
- 圖片代號:
H-100
- vtest:
30
- htest:
120000000
- atest:
5
- wtest:
0.75
技術(shù)參數(shù)
- 電壓 - 集射極擊穿(最大值):
12V
- 頻率 - 躍遷:
8GHz
- 噪聲系數(shù)(dB,不同 f 時的典型值):
1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
- 增益:
19.5dB
- 功率 - 最大值:
175mW
- 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):
50 @ 5mA,8V
- 電流 - 集電極(Ic)(最大值):
20mA
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝
- 封裝/外殼:
SC-75,SOT-416
- 供應(yīng)商器件封裝:
PG-SC-75
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LINFINEON |
23+ |
SOT393 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
LINFINEON |
23+ |
SOT393 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
2223+ |
PG-SOD323-2 |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
INFINEON |
21+ |
標準封裝 |
100 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號 |
詢價 | ||
恩XP |
1725+ |
SOT23 |
7500 |
只做原裝進口,假一罰十 |
詢價 | ||
VISHAY |
23+ |
SOT143 |
1050 |
專營高頻管模塊,全新原裝! |
詢價 | ||
91+ |
TO-39 |
1000 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | |||
恩XP |
2016+ |
SOT-23 |
1980 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
恩XP |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
SOT323 |
64550 |
正規(guī)渠道,只有原裝! |
詢價 |
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