NPN 9 GHz wideband transistor

DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MA

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ? High Power Gain ? High Current Gain Bandwidth Product ? Low Noise Figure APPLICATIONS ? Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.).

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ISC

無(wú)錫固電

NPN 9 GHz寬頻帶晶體管

BFR540是NPN硅平面外延晶體管，采用SOT23塑料封裝。 金屬化鍍金確保極佳的可靠性\n高功率增益\n高傳送頻率\n低噪聲;

恩XP

高頻三極管

MXTronics

時(shí)代民芯

NPN 9 GHz wideband transistor

文件：116.96 Kbytes 頁(yè)數(shù)：16 Pages

JMNIC

錦美電子

NPN 9 GHz wideband transistor

文件：116.96 Kbytes 頁(yè)數(shù)：16 Pages

JMNIC

錦美電子