NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For power amplifier in DECT and PCN systems ● fT = 5.5GHz ● Gold metalization for high reliability

文件：79.18 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPN Silicon RF Transistor ? For power amplifier in DECT and PCN systems ? fT = 5.5GHz ? Gold metalization for high reliability

文件：60.58 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

NPN Silicon RF Transistor

NPN Silicon RF Transistor● For power amplifier in DECT and PCN systems\n● fT = 5.5GHz\n● Gold metalization for high reliability

Infineon

英飛凌

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability propertie

文件：73.48 Kbytes 頁數(shù)：9 Pages

PHI

PHI

VHF power amplifier modules

DESCRIPTION The BGY135 and BGY136 are two-stage broadband RF amplifier modules in a SOT132B package. Each module consists of two NPN transistor dies together with lumped-element matching components. FEATURES ? 12.5 V nominal supply voltage ? 18 W output power. APPLICATIONS ? Mobile communica

文件：106.46 Kbytes 頁數(shù)：10 Pages

PHI

PHI

SURFACE MOUNT CHIP LED LAMPS

文件：260.61 Kbytes 頁數(shù)：1 Pages

YSTONE

早安股份