絲?。?a target="_blank" title="Marking" href="/-mg/marking.html">-MG；Package：SOT-143B；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：132.2 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/-mg/marking.html">-MG；Package：SOT-143B；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：312.12 Kbytes 頁數(shù)：14 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/-mg/marking.html">-MG；Package：SOT-143B；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ? High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in low noise ,h

文件：360.44 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

NPN 9GHz Wideband Transistor

■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.

文件：786.62 Kbytes 頁數(shù)：8 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/n37/marking.html">N37；Package：SOT-143B；NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V，IC=10mA，f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V，IC=40mA，f=1GHz

文件：556.92 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

isc Silicon NPN RF Transistor

文件：245.37 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc Silicon NPN RF Transistor

文件：343.31 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

NPN 9 GHz寬頻帶晶體管

NPN硅平面外延晶體管，設(shè)計(jì)用于RF前端GHz范圍內(nèi)的寬帶應(yīng)用，比如模擬和數(shù)字移動(dòng)電話、無繩電話（CT1、CT2、DECT等）、光纖系統(tǒng)中的雷達(dá)探測器、衛(wèi)星電視(SATV)調(diào)諧器、MATV/CATV放大器以及中繼放大器。該類晶體管采用SOT143B和SOT143R塑料封裝。 金屬化鍍金確保極佳的可靠性\n高功率增益\n高傳送頻率\n低噪聲;

恩XP

NPN高頻低噪聲晶體管

RM TECHNOLOGY

瑞美科