NPN 7 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

NPN 7 GHz寬頻帶晶體管

NPN硅平面外延晶體管，采用4針SOT223塑料封裝。 金屬化鍍金確保極佳的可靠性 \n高功率增益\n高傳送頻率\n低噪聲;

恩XP

NPN 7 GHz wideband transistor

文件：82.54 Kbytes 頁(yè)數(shù)：12 Pages

JMNIC

錦美電子

NPN 7 GHz wideband transistor

文件：82.54 Kbytes 頁(yè)數(shù)：12 Pages

JMNIC

錦美電子