Silicon PNP Planar RF Transistor

Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features High cross modulation performance High power gain Low noise High reverse attenuation

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VISHAYVishay Siliconix

威世威世科技公司

PNP SILICON PLANAR TRANSISTOR

BF 976 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use in uncontrolled UHF and VHF input stages featuring low cross modulation.

文件：35.67 Kbytes 頁數(shù)：2 Pages

SIEMENS

西門子

SILICON N-CHANNEL DUAL GATE MOS-FET

SILICON N-CHNNEL DUAL GATE MOS-FET

文件：27.76 Kbytes 頁數(shù)：1 Pages

PHI

PHI

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ? Integrated gate protection diodes ? High cross modulation performance ? Low noise figure ? High gain ? High AGC-range ? Low feedback capacitance ? Low input capacitance ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications ??

文件：139.14 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES ? Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS ? UHF applications such

文件：66.46 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES ? Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS ? RF applications such a

文件：71.14 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES ? Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS ? VHF applications such

文件：42.2 Kbytes 頁數(shù)：5 Pages

PHI

PHI

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES ? Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS ? VHF applications such

文件：226.97 Kbytes 頁數(shù)：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP