| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S 文件：308.77 Kbytes 頁(yè)數(shù)：15 Pages | 恩XP | 恩XP | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S 文件：308.77 Kbytes 頁(yè)數(shù)：15 Pages | 恩XP | 恩XP | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages | 恩XP | 恩XP | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, S 文件：114.5 Kbytes 頁(yè)數(shù)：16 Pages | PHI PHI | PHI | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES 文件：111.29 Kbytes 頁(yè)數(shù)：16 Pages | PHI PHI | PHI | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES 文件：303.6 Kbytes 頁(yè)數(shù)：14 Pages | 恩XP | 恩XP | ||
N-channel dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Specially de 文件：119.77 Kbytes 頁(yè)數(shù)：12 Pages | PHI PHI | PHI | ||
Dual-gate MOS-FETs DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES ? High forward transfer admittance ? Short ch 文件：258.18 Kbytes 頁(yè)數(shù)：9 Pages | 恩XP | 恩XP | ||
Dual-gate MOS-FETs DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES ? High forward transfer admittance ? Short ch 文件：87.6 Kbytes 頁(yè)數(shù)：8 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages | 恩XP | 恩XP |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
SMAJ14CA
- 制造商：
Littelfuse Inc.
- 類別：
電路保護(hù) > TVS - 二極管
- 系列：
SMAJ
- 包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
- 類型：
齊納
- 電壓 - 反向斷態(tài)（典型值）：
14V
- 電壓 - 擊穿（最小值）：
15.6V
- 不同 Ipp 時(shí)電壓 - 箝位（最大值）：
23.2V
- 電流 - 峰值脈沖 (10/1000μs)：
17.2A
- 功率 - 峰值脈沖：
400W
- 電源線路保護(hù)：
無(wú)
- 應(yīng)用：
通用
- 工作溫度：
-65°C ~ 150°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
DO-214AC，SMA
- 供應(yīng)商器件封裝：
DO-214AC（SMA）
- 描述：
TVS DIODE 14VWM 23.2VC DO214AC
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2021+ |
DO-214AC |
658926 |
代理VISHAY品牌全系列型號(hào),價(jià)格優(yōu) |
詢價(jià) | ||
SUNMATE(森美特) |
2019+ROHS |
DO-214AC(SMA) |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價(jià) | ||
群鑫 |
22+ |
SMA |
30000 |
原裝正品 一級(jí)代理 |
詢價(jià) | ||
BRIGHTKING/君耀 |
2019+PB |
SMADO-214AC |
45000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
LITTELFUSE/力特 |
2021+ |
SMA |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
LITTELFU |
09+ |
DO-214AC |
98000 |
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價(jià) | ||
CCD |
13+ |
DO-214 |
6258 |
原裝分銷(xiāo) |
詢價(jià) | ||
ON/DIODES/PANJIT |
24+ |
SMA |
43000 |
詢價(jià) | |||
Littelf |
23+ |
DO-214A |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢價(jià) | ||
VISHAYMAS |
25+23+ |
DO-214AC |
51188 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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