N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES ? Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS ? UHF applications such

文件：66.46 Kbytes 頁數(shù)：8 Pages

PHI

PHI

UHF power LDMOS transistor

General description A 900 W LDMOS RF power transistor for broadcast Doherty, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz. Features and ben

文件：1.52707 Mbytes 頁數(shù)：13 Pages

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UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

文件：1.22885 Mbytes 頁數(shù)：12 Pages

AMPLEON

安譜隆

UHF power LDMOS transistor

General description A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400

文件：1.22885 Mbytes 頁數(shù)：12 Pages

AMPLEON

安譜隆