絲?。?a target="_blank" title="Marking" href="/20-/marking.html">20-；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES ? Low leakage level (typ. 500 fA) ? High gain ? Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS ? Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/20-/marking.html">20-；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N溝道FET

SOT23封裝N溝道對稱硅結(jié)型場效應(yīng)晶體管。 高增益\n低截止電壓\n低泄漏級別;

恩XP

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES ? Low leakage level (typ. 500 fA) ? High gain ? Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS ? Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES ? Low leakage level (typ. 500 fA) ? High gain ? Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS ? Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 頁數(shù)：12 Pages

PHI

PHI