N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES ? High transfer admittance ? Low input capacitance ? Low feedback capacitance ? Low noise. APPLICATIONS ? Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 頁數(shù)：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N溝道FET

SOT23封裝N溝道對稱結(jié)型場效應晶體管。 高傳輸導納\n低反饋容值\n低輸入容值\n低噪聲;

恩XP

N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES ? High transfer admittance ? Low input capacitance ? Low feedback capacitance ? Low noise. APPLICATIONS ? Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 頁數(shù)：12 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside eliminates DC isolator

文件：167.54 Kbytes 頁數(shù)：12 Pages

PHI

PHI