絲?。?a target="_blank" title="Marking" href="/21/marking.html">21*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES ? Low leakage level (typ. 500 fA) ? High gain ? Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS ? Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/21/marking.html">21*；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

N溝道FET

N溝道對(duì)稱(chēng)硅結(jié)型場(chǎng)效應(yīng)晶體管，采用SOT23封裝。 高增益\n 低截止電壓\n 低漏電水平;

恩XP

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES ? Low leakage level (typ. 500 fA) ? High gain ? Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS ? Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the

文件：94.9 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI