| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：112.73 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：112.73 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：112.73 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：131.09 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：131.09 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
電視 （TV）_行輸出 （HA）_振蕩級 （O）
- 封裝形式：
直插封裝
- 極限工作電壓：
220V
- 最大電流允許值：
0.05A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
- 最大耗散功率：
0.3W
- 放大倍數(shù)：
- 圖片代號：
D-8
- vtest：
220
- htest：
999900
- atest：
0.05
- wtest：
0.3
產(chǎn)品屬性
- 產(chǎn)品編號：
BF12
- 制造商：
Pepperl+Fuchs, Inc.
- 類別：
傳感器，變送器 > 配件
- 包裝：
盒
- 配件類型：
安裝法蘭
- 描述：
M12 DIA MOUNTING FLANGE
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
原廠 |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
Pepperl + Fuchs |
2022+ |
6 |
全新原裝 貨期兩周 |
詢價 | |||
115 |
9051 |
05+ |
1 |
原廠原裝 |
詢價 | ||
PHI |
SOT23-4 |
2978 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
PHI |
24+/25+ |
2899 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
PHI |
1215+ |
SOT-143 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應. |
詢價 | ||
恩XP |
2016+ |
SOT-363 |
72000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
恩XP |
24+ |
SOT343 |
5000 |
深圳現(xiàn)貨價格優(yōu)勢 |
詢價 | ||
恩XP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
PHI |
24+ |
SOT23-5 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
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