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首頁 >BF12>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
BF1202R	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages	恩XP	恩XP
BF1202WR	文件：116.05 Kbytes Page：16 Pages	N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：116.05 Kbytes 頁數(shù)：16 Pages	PHI PHI	PHI
BF1202WR	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages	恩XP	恩XP
BF1203	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages	恩XP	恩XP
BF1203	文件：166.54 Kbytes Page：20 Pages	Dual N-channel dual gate MOS-FET DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes betwe 文件：166.54 Kbytes 頁數(shù)：20 Pages	PHI PHI	PHI
BF1204	文件：110.45 Kbytes Page：12 Pages	Dual N-channel dual gate MOS-FET DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between t 文件：110.45 Kbytes 頁數(shù)：12 Pages	PHI PHI	PHI
BF1204	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages	恩XP	恩XP
BF1205	文件：185.07 Kbytes Page：24 Pages	Dual N-channel dual gate MOS-FET DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabil 文件：185.07 Kbytes 頁數(shù)：24 Pages	PHI PHI	PHI
BF1205C	文件：171.46 Kbytes Page：22 Pages	Dual N-channel dual gate MOS-FET General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC st 文件：171.46 Kbytes 頁數(shù)：22 Pages	PHI PHI	PHI
BF1206	文件：186.36 Kbytes Page：21 Pages	Dual N-channel dual-gate MOS-FET DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between 文件：186.36 Kbytes 頁數(shù)：21 Pages	PHI PHI	PHI

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晶體管資料

型號(hào)：
BF120
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
電視（TV）_行輸出（HA）_振蕩級(jí) （O）
封裝形式：
直插封裝
極限工作電壓：
220V
最大電流允許值：
0.05A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
最大耗散功率：
0.3W
放大倍數(shù)：
圖片代號(hào)：
D-8
vtest：
220
htest：
999900
atest：
0.05
wtest：
0.3

產(chǎn)品屬性

產(chǎn)品編號(hào)：
BF12
制造商：
Pepperl+Fuchs, Inc.
類別：
傳感器，變送器 > 配件
包裝：
盒
配件類型：
安裝法蘭
描述：
M12 DIA MOUNTING FLANGE

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市鼎盛源芯科技有限公司	BF12	原廠	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢	詢價(jià)
上海市鑫鴻達(dá)電子	BF12	Pepperl + Fuchs	2022+		6	全新原裝貨期兩周	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	BF1204	115	9051	05+	1	原廠原裝	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	BF1212WR(PB-FREE)	PHI		SOT23-4	2978	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市聯(lián)世界科技有限公司	BF1201R	PHI	24+/25+		2899	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市勤思達(dá)科技有限公司	BF1202	PHI	1215+	SOT-143	150000	全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).	詢價(jià)
深圳市凌旭科技有限公司	BF1204	恩XP	2016+	SOT-363	72000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	BF1212WR,115	恩XP	24+	SOT343	5000	深圳現(xiàn)貨價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市利加科技有限公司	BF1205	恩XP	16+	NA	8800	誠信經(jīng)營	詢價(jià)
深圳市豪邁興電子有限公司	BF1206-TL	PHI	24+	SOT23-5	21322	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)

更多BF12供應(yīng)商更新時(shí)間2026-1-19 10:16:00

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