N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel Field-Effect Transistor in a plastic SOT143B package. High transfer admittance to input capacitance ratio\nLow noise;

恩XP

Bi-color Type (1.6 X 1.5 mm)

文件：556.56 Kbytes 頁數(shù)：23 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.

Bi-Color Ultra Compact SMT LED

文件：170 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Bi-color Type (1.6 X 1.5 mm)

文件：556.56 Kbytes 頁數(shù)：23 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.