| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/k/marking.html">K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY 文件：197.14 Kbytes 頁(yè)數(shù)：18 Pages | RENESAS 瑞薩 | RENESAS | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF 文件：195.05 Kbytes 頁(yè)數(shù)：14 Pages | RENESAS 瑞薩 | RENESAS | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：63.8 Kbytes 頁(yè)數(shù)：12 Pages | NEC 瑞薩 | NEC | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush 文件：55.54 Kbytes 頁(yè)數(shù)：5 Pages | NEC 瑞薩 | NEC | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush 文件：55.54 Kbytes 頁(yè)數(shù)：5 Pages | NEC 瑞薩 | NEC | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush 文件：55.54 Kbytes 頁(yè)數(shù)：5 Pages | NEC 瑞薩 | NEC | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：63.8 Kbytes 頁(yè)數(shù)：12 Pages | NEC 瑞薩 | NEC | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF 文件：195.05 Kbytes 頁(yè)數(shù)：14 Pages | RENESAS 瑞薩 | RENESAS | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF 文件：195.05 Kbytes 頁(yè)數(shù)：14 Pages | RENESAS 瑞薩 | RENESAS | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：63.8 Kbytes 頁(yè)數(shù)：12 Pages | NEC 瑞薩 | NEC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
NE3
- 制造商：
Essentra Components
- 類別：
電纜，電線 - 管理 > 電纜支撐與緊固件
- 系列：
Richco
- 包裝：
散裝
- 類型：
線夾，P 型
- 開(kāi)口尺寸：
0.188"（4.78mm）
- 安裝類型：
緊固件
- 材料：
鋁
- 顏色：
黑色，銀色
- 寬度：
0.375"（9.53mm）
- 面板孔尺寸：
0.204"（5.18mm）
- 材料厚度：
0.031"（0.80mm）
- 特性：
保護(hù)涂層
- 描述：
CBL CLAMP P-TYPE FASTENER
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Richco |
新 |
775 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Richco |
2022+ |
771 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Essentra |
22+ |
NA |
9692 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
ESSENTRA COMPONENTS |
23+ |
原封阻容元件 |
1000000 |
詢價(jià) | |||
NEC |
SMT-86 |
157 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
NEC |
23+ |
SOT-343 |
30000 |
原裝正品,假一罰十 |
詢價(jià) | ||
NEC原裝 |
1215+ |
SOT343 |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
NEC |
05PB |
SOT343 |
2500 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
NEC |
13+ |
SO-86 |
9988 |
原裝分銷 |
詢價(jià) | ||
NEC |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
