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首頁 >NE3>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
NE32584C-SL	文件：73.54 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：73.54 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE32584C-T1	文件：73.54 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：73.54 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE32584C-T1A	文件：73.54 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：73.54 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE325S01	文件：60.53 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 文件：60.53 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE325S01	文件：52.74 Kbytes Page：5 Pages	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent 文件：52.74 Kbytes 頁數(shù)：5 Pages	CEL	CEL
NE325S01-T1	文件：60.53 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 文件：60.53 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE325S01-T1	文件：52.74 Kbytes Page：5 Pages	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent 文件：52.74 Kbytes 頁數(shù)：5 Pages	CEL	CEL
NE325S01-T1B	文件：60.53 Kbytes Page：12 Pages	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES ? Super Low Noise Figure & High Associated Gain NF = 文件：60.53 Kbytes 頁數(shù)：12 Pages	NEC 瑞薩	NEC
NE325S01-T1B	文件：52.74 Kbytes Page：5 Pages	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent 文件：52.74 Kbytes 頁數(shù)：5 Pages	CEL	CEL
NE32684A	文件：194.01 Kbytes Page：5 Pages	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：194.01 Kbytes 頁數(shù)：5 Pages	NEC 瑞薩	NEC

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產(chǎn)品屬性

產(chǎn)品編號(hào)：
NE3
制造商：
Essentra Components
類別：
電纜，電線 - 管理 > 電纜支撐與緊固件
系列：
Richco
包裝：
散裝
類型：
線夾，P 型
開口尺寸：
0.188"（4.78mm）
安裝類型：
緊固件
材料：
鋁
顏色：
黑色，銀色
寬度：
0.375"（9.53mm）
面板孔尺寸：
0.204"（5.18mm）
材料厚度：
0.031"（0.80mm）
特性：
保護(hù)涂層
描述：
CBL CLAMP P-TYPE FASTENER

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
上海金慶電子技術(shù)有限公司	NE3	Richco	新		775	全新原裝貨期兩周	詢價(jià)
上海市鑫鴻達(dá)電子	NE3	Richco	2022+		771	全新原裝貨期兩周	詢價(jià)
深圳市易訊博科技有限公司	NE3	Essentra	22+	NA	9692	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市正納電子有限公司	NE3	ESSENTRA COMPONENTS	23+	原封阻容元件	1000000		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	NE3210S01-T1	NEC		SMT-86	157	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	NE3509M04	NEC	23+	SOT-343	30000	原裝正品,假一罰十	詢價(jià)
深圳市勤思達(dá)科技有限公司	NE3503M04-T2-A	NEC原裝	1215+	SOT343	150000	全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).	詢價(jià)
深圳市益百分電子有限公司	NE3508M04-T2	NEC	05PB	SOT343	2500	全新原裝進(jìn)口自己庫存優(yōu)勢(shì)	詢價(jià)
深圳市粵科源興科技有限公司	ne32484	NEC	13+	SO-86	9988	原裝分銷	詢價(jià)
深圳市利加科技有限公司	NE32584C-T1	NEC	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)

更多NE3供應(yīng)商更新時(shí)間2026-1-20 16:05:00

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