| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 頁數(shù)：10 Pages | NEC 瑞薩 | NEC | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 頁數(shù)：10 Pages | NEC 瑞薩 | NEC | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 頁數(shù)：10 Pages | NEC 瑞薩 | NEC | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 頁數(shù)：10 Pages | NEC 瑞薩 | NEC | ||
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also 文件：62.89 Kbytes 頁數(shù)：10 Pages | NEC 瑞薩 | NEC | ||
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES ? VERY LOW NOISE 文件：74.21 Kbytes 頁數(shù)：12 Pages | NEC 瑞薩 | NEC | ||
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES ? VERY LOW NOISE 文件：74.21 Kbytes 頁數(shù)：12 Pages | NEC 瑞薩 | NEC | ||
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES ? VERY LOW NOISE 文件：74.21 Kbytes 頁數(shù)：12 Pages | NEC 瑞薩 | NEC | ||
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES ? Low noise figure NF = 0.6 dB TYP. at f = 2 GHz ? High associated gain Ga = 16 dB TYP. at f = 2 GHz ? Gate width: Wg = 400 μm ? 4 pins super mini mold ? Tape & reel packaging only available 文件：114.81 Kbytes 頁數(shù)：16 Pages | NEC 瑞薩 | NEC | ||
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a 文件：200.1 Kbytes 頁數(shù)：10 Pages | CEL | CEL |
產(chǎn)品屬性
- 產(chǎn)品編號：
NE3
- 制造商：
Essentra Components
- 類別：
電纜，電線 - 管理 > 電纜支撐與緊固件
- 系列：
Richco
- 包裝：
散裝
- 類型：
線夾，P 型
- 開口尺寸：
0.188"（4.78mm）
- 安裝類型：
緊固件
- 材料：
鋁
- 顏色：
黑色，銀色
- 寬度：
0.375"（9.53mm）
- 面板孔尺寸：
0.204"（5.18mm）
- 材料厚度：
0.031"（0.80mm）
- 特性：
保護涂層
- 描述：
CBL CLAMP P-TYPE FASTENER
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Richco |
新 |
775 |
全新原裝 貨期兩周 |
詢價 | |||
Richco |
2022+ |
771 |
全新原裝 貨期兩周 |
詢價 | |||
Essentra |
22+ |
NA |
9692 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
ESSENTRA COMPONENTS |
23+ |
原封阻容元件 |
1000000 |
詢價 | |||
NEC |
SMT-86 |
157 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
NEC |
23+ |
SOT-343 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
NEC原裝 |
1215+ |
SOT343 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
NEC |
05PB |
SOT343 |
2500 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
NEC |
13+ |
SO-86 |
9988 |
原裝分銷 |
詢價 | ||
NEC |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
