絲?。?strong>B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?strong>B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：300.28 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/b1274/marking.html">B1274；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage.

文件：1.3319 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

Silicon PNP transistor in a TO-220F Plastic Package

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High VCEO, low saturation voltage, wide ASO. Applications Low frequency power amplifier applications.

文件：977.43 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

General Purpose Switching and Amplification.

FEATURES ? General Purpose Switching and Amplification. ? Wide ASO (Adoption of MBIT Process) ? Low Saturation Voltage.

文件：104.2 Kbytes 頁數(shù)：1 Pages

SECOS

喜可士

60V/3A Low-Frequency Power Amplifier Applications

60V/3A Low-Frequency Power Amplifier Applications Applications ?General power amplifier. Features ? Wide ASO (Adoption of MBIT process). ? Low saturation voltage. ? High reliability. ? High breakdown voltage. ? Micaless package facilitating mounting.

文件：34.38 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

文件：253.86 Kbytes 頁數(shù)：4 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

文件：167.22 Kbytes 頁數(shù)：4 Pages

ISC

無錫固電

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Wide ASO (Adoption of MBIT Process). ● Low Saturation Voltage. ● High Reliability. ● High Breakdown Voltage.

文件：1.69248 Mbytes 頁數(shù)：3 Pages

JIANGSU

長電科技

Silicon PNP Power Transistor

DESCRIPTION ? High Reliability ? Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max)@Ic=-2A ? Wide Area of Safe Operation APPLICATIONS ? Designed for low frequency power amplifier applications.

文件：130.65 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司