| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl 文件：242.32 Kbytes 頁(yè)數(shù)：6 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?strong>B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET 文件：300.28 Kbytes 頁(yè)數(shù)：6 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/b1274/marking.html">B1274；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage. 文件：1.3319 Mbytes 頁(yè)數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
Silicon PNP transistor in a TO-220F Plastic Package Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High VCEO, low saturation voltage, wide ASO. Applications Low frequency power amplifier applications. 文件：977.43 Kbytes 頁(yè)數(shù)：6 Pages | FOSHAN 藍(lán)箭電子 | FOSHAN | ||
General Purpose Switching and Amplification. FEATURES ? General Purpose Switching and Amplification. ? Wide ASO (Adoption of MBIT Process) ? Low Saturation Voltage. 文件：104.2 Kbytes 頁(yè)數(shù)：1 Pages | SECOS 喜可士 | SECOS | ||
60V/3A Low-Frequency Power Amplifier Applications 60V/3A Low-Frequency Power Amplifier Applications Applications ?General power amplifier. Features ? Wide ASO (Adoption of MBIT process). ? Low saturation voltage. ? High reliability. ? High breakdown voltage. ? Micaless package facilitating mounting. 文件：34.38 Kbytes 頁(yè)數(shù)：4 Pages | SANYO 三洋 | SANYO | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications 文件：253.86 Kbytes 頁(yè)數(shù)：4 Pages | SAVANTIC | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications 文件：167.22 Kbytes 頁(yè)數(shù)：4 Pages | ISC 無(wú)錫固電 | ISC | ||
TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Wide ASO (Adoption of MBIT Process). ● Low Saturation Voltage. ● High Reliability. ● High Breakdown Voltage. 文件：1.69248 Mbytes 頁(yè)數(shù)：3 Pages | JIANGSU 長(zhǎng)電科技 | JIANGSU | ||
Silicon PNP Power Transistor DESCRIPTION ? High Reliability ? Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max)@Ic=-2A ? Wide Area of Safe Operation APPLICATIONS ? Designed for low frequency power amplifier applications. 文件：130.65 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
詳細(xì)參數(shù)
- 型號(hào)：
B127
- 制造商：
Infineon Technologies AG
- 功能描述：
MOSFET N-Channel 600V 0.021A Logic SOT23
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
7548 |
原廠(chǎng)渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
25+ |
SOT-23 |
39398 |
INFINEON/英飛凌全新特價(jià)BSS127即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
SOT-23 |
26880 |
公司優(yōu)勢(shì)庫(kù)存熱賣(mài)全新原裝!歡迎來(lái)電 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢(xún)價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
23+ |
25900 |
新到現(xiàn)貨,只有原裝 |
詢(xún)價(jià) | |||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
2025+ |
SOT-23 |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
25+ |
SOT-23 |
18798 |
原裝正品現(xiàn)貨,原廠(chǎng)訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢(xún)價(jià) | ||
INFINEON |
2016+ |
SOT-23 |
10264 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) |
相關(guān)芯片絲印
更多- 2SB1274
- ESD12V23TS-2LA
- STB12NM50-1
- TP2112-VR
- 2SB1375
- 2SB1426
- SN74AHCT1G14DBVT
- 74AHCT1G14DBVRE4.A
- 74AHCT1G14DBVTE4
- 74AHCT1G14DBVRG4
- 74AHCT1G14DBVTE4
- TP2114-SR
- ESD15V23T-2LA
- 844201BKI-45LF
- LNB8616DT0AG
- 2SB1644J
- BUF16821AIPWPRQ1.A
- BQ25170DSGR
- BQ25170DSGRG4
- BQ25172DSGR
- BQ25173QWDRCRQ1
- BQ25180YBGR
- BQ25186DLHR
- SBRS8190NT3G
- MBRS190T3G
- AP3607FNTR-G1
- SBRS81100T3G
- MBRS1100T3G
- TMAG5231B1DQDMRR
- TMAG5231B1DQDMRR
- B1D02065K
- B1D02120K
- B1D04065E
- B1D04065KF
- B1D05120K
- B1D06065F
- B1D06065KF
- B1D08065E
- B1D08065K
- B1D08065KS
- B1D10065F
- B1D10065K
- B1D10065KS
- B1D10120H
- B1D10120K
相關(guān)庫(kù)存
更多- ESD12V23T-2LA
- STB12NM50T4
- TP2112-SR
- BP1360E23E
- 2SB1426-TA
- SN74AHCT1G14DBVR
- 74AHCT1G14DBVRE4
- SN74AHCT1G14DBVT
- 74AHCT1G14DBVRG4
- 74AHCT1G14DBVRG4.A
- 74AHCT1G14DBVTG4.A
- TP2114-TR
- ESD15V23TS-2LA
- 844201BKI-45LFT
- ESD16VASAFH
- BUF16821AIPWPRQ1
- IMB17A
- BQ25170DSGR.A
- BQ25170DSGRG4.A
- BQ25173DSGR
- ESD18VASAFH
- BQ25185DLHR
- BQ25188YBGR
- SBRS8190T3G
- AP3606FNTR-G1
- SBRS81100NT3G
- SBRS81100T3G-VF01
- TP2111-CR
- TMAG5231B1DQDMRR
- B1D02065E
- B1D02120E
- B1D03120E
- B1D04065K
- B1D05120E
- B1D06065E
- B1D06065K
- B1D06065KS
- B1D08065F
- B1D08065KF
- B1D10065E
- B1D10065H
- B1D10065KF
- B1D10120E
- B1D10120HC
- B1D12065K
