絲印：B1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features ? Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V ? 1.65-V to 5.5-V operating VCC range ? Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.75512 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲?。?strong>B1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features ? Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V ? 1.65-V to 5.5-V operating VCC range ? Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.62905 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲?。?strong>B1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features ? Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V ? 1.65-V to 5.5-V operating VCC range ? Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.62841 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/b1d02065e/marking.html">B1D02065E；Package：TO-252-2；SiC Schottky Diode

Features ? Extremely low reverse current ? No reverse recovery current ? Temperature independent switching ? Positive temperature coefficient on VF ? Excellent surge current capability ? Low capacitive charge Benefits ? Essentially no switching losses ? System efficiency improvement over

文件：842.76 Kbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲?。?a target="_blank" title="Marking" href="/b1d02065k/marking.html">B1D02065K；Package：TO-220-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power facto

文件：1.29766 Mbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲印：B1D02120E；Package：TO-252-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：2.26629 Mbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲?。?a target="_blank" title="Marking" href="/b1d02120k/marking.html">B1D02120K；Package：TO-220-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact

文件：1.4052 Mbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲?。?a target="_blank" title="Marking" href="/b1d03120e/marking.html">B1D03120E；Package：TO-252-2；SiC Schottky Diode

Features ? Extremely low reverse current ? No reverse recovery current ? Temperature independent switching ? Positive temperature coefficient on VF ? Excellent surge current capability ? Low capacitive charge Benefits ? Essentially no switching losses ? System efficiency improvement over

文件：588.31 Kbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲印：B1D04065E；Package：TO-252-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V Excellent surge current capability Low capacitive charge

文件：1.41598 Mbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體

絲印：B1D04065K；Package：TO-220-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drivers Power fact

文件：1.41192 Mbytes 頁數(shù)：7 Pages

BASICSEMI

基本半導體