絲?。?strong>B12；Package：SOT-23；NPN General Purpose Amplifier

文件：731.89 Kbytes 頁(yè)數(shù)：4 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/b1202/marking.html">B1202；Package：TL；Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features ? Adoption of FBET and MBIT processes ? Large current capacitance and wide ASO ? Low collector to emitter saturation voltage ? Fast switching speed ? Small and slim package making it easy to make 2SB1202/2SD1

文件：100.82 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：B1237；Package：ATV；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：128.6 Kbytes 頁(yè)數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/b123/marking.html">B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

文件：493.66 Kbytes 頁(yè)數(shù)：3 Pages

UMW

友臺(tái)半導(dǎo)體

絲印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 頁(yè)數(shù)：5 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/b123/marking.html">B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

絲?。?a target="_blank" title="Marking" href="/b123kx/marking.html">B123KX；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

文件：237.94 Kbytes 頁(yè)數(shù)：6 Pages

NCEPOWER

新潔能

絲印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 頁(yè)數(shù)：6 Pages

RECTRON

麗正國(guó)際

絲印：B123；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch

文件：5.46728 Mbytes 頁(yè)數(shù)：9 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b1202/marking.html">B1202；Package：TP；High-Current Switching Applications

文件：500 Kbytes 頁(yè)數(shù)：10 Pages

SANYO

三洋