| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery 文件：67.79 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co 文件：328.38 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
POWER MOS V Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery 文件：67.37 Kbytes 頁(yè)數(shù)：4 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery 文件：62.59 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
POWER MOS V Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery 文件：67.37 Kbytes 頁(yè)數(shù)：4 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi 文件：60.38 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 27A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：328.84 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.15 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.15 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW |
詳細(xì)參數(shù)
- 型號(hào)：
APT8030
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ATP |
06+ |
TO-264 |
300 |
原裝 |
詢價(jià) | ||
APT |
15+ |
TO-264 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
APT |
23+ |
模塊 |
240 |
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
APT |
24+ |
8866 |
詢價(jià) | ||||
APT |
23+ |
TO-3PL |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
APT |
24+ |
模塊 |
3500 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
APTMICR |
25+ |
TO-247 |
15 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
MICROSEMI |
24+ |
TO-264 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
APT |
22+ |
TO-3PL |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
MICROSEMI |
25+23+ |
TO-264 |
24444 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
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- APT8090BNR
- APT80F60J
- APT80GA60B
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- APT81H50L
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相關(guān)庫(kù)存
更多- APT8030B2VFR_05
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- APT8030JVFR_05
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- APT8030LVFRG
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- APT8043BFLL_04
- APT8043BLL
- APT8043BLLG
- APT8043SFLLG
- APT8043SLLG
- APT8052BFLL_04
- APT8052BLL
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- APT8052SFLLG
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- APT8065BVR
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- APT8075BVFR_05
- APT8075BVR
- APT8075DN
- APT8075SN
- APT8090BN
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- APT80F60J_11
- APT80GA60LD40
- APT80GA90B
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- APT80GP60JDQ3
- APT80M60J_09
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- APT84M50L
