N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · Power Factor Correction (PFC)

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ISC

無錫固電

POWER MOS V 800V 27.0A 0.30/0.35 Ohm

APT

晶科電子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

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