| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT5015 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? 文件：60.29 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI? Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers 文件：29.39 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate lay 文件：116.53 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? 文件：60.29 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate lay 文件：116.53 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor 文件：419.76 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor 文件：419.75 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
FREDFETs ROHS | Microchip 微芯科技 | Microchip | ||
POWER MOS V FREDFET | APT 晶科電子 | APT | ||
POWER MOS V 500V 32A 0.150 Ohm | APT 晶科電子 | APT |
詳細(xì)參數(shù)
- 型號：
APT5015
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ATP |
06+ |
TO-247 |
600 |
原裝庫存 |
詢價 | ||
APT |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
APT/晶科電子 |
10+ |
TO-247 |
30 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
APT |
23+ |
TO-247 |
12800 |
公司只有原裝 歡迎來電咨詢。 |
詢價 | ||
APT |
23+ |
TO-247 |
30 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
APT |
25+ |
TO-247 |
37 |
原裝正品,歡迎來電咨詢! |
詢價 | ||
APT |
22+ |
TO-247 |
20000 |
公司只做原裝 品質(zhì)保證 |
詢價 | ||
APT |
24+ |
8866 |
詢價 | ||||
APT |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
24+ |
模塊 |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- APT5015BVFR
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- APT5018SLL
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- APT5024SFLL
- APT5024SLL
- APT5024SVFRG
- APT5024SVRG
- APT5025BN
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- APT5025HN
- APT5027
- APT5027BNR
- APT5028BVRG
- APT5028SVRG
- APT5030AVR
- APT5030BNR
